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FRAF1001G - FRAF1007G
Isolated 10 AMPS. Glass Passivated Fast Recovery Rectifiers ITO-220AC
.185(4.7) .173(4.4) .124(3.16) .118(3.00)
.406(10.3) .390(9.90) .134(3.4)DIA .113(3.0)DIA
.272(6.9) .248(6.3)
.112(2.85) .100(2.55)
Features
Glass passivated chip junction. High efficiency, Low VF High current capability High reliability High surge current capability Low power loss
.606(15.5) .583(14.8)
.063(1.6) MAX
.161(4.1) .146(3.7)
.110(2.8) .098(2.5)
.030(0.76) .020(0.50)
.055(1.4) .043(1.1) .035(0.9) .020(0.5)
.071(1.8) MAX
.543(13.8) .512(13.2)
Mechanical Data
Cases: ITO-220AC molded plastic Epoxy: UL 94V-0 rate flame retardant Terminals: Pure tin plated, Lead free. Leads solderable per MIL-STD-202, Method 208 guaranteed Polarity: As marked High temperature soldering guaranteed: o 260 C /10 seconds 0.25",(6.35mm) from case. Mounting position: Any Weight: 2.24 grams Mounting torque: 5 in - 1bs. max.
2
.100(2.55)
.100(2.55)
PIN 1 PIN 2 CASE
Case Positive
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current @TC = 55 oC Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @ 10A Maximum DC Reverse Current @ TC=25 oC at Rated DC Blocking Voltage @ TC=125 oC Maximum Reverse Recovery Time ( Note 2 ) Typical Junction Capacitance ( Note 1 ) TJ=25 oC Typical Thermal Resistance (Note 3) Operating and Storage Temperature Range
Symbol FRAF FRAF FRAF FRAF FRAF FRAF FRAF Units
1001G 1002G 1003G 1004G 1005G 1006G 1007G
V RRM V RMS V DC I(AV) IFSM VF IR Trr
50 35 50
100 70 100
200 140 200
400 280 400 10 150 1.3 5.0 100
600 420 600
800 560 800
1000 700 1000
V V V A A V uA uA nS pF o C/W o C
150
Cj
R JC
Notes:
T J ,T STG 1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C. 2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 3. Thermal Resistance from Junction to Case, with Heatsink size 2" x 3" x 0.25" Al-Plate.
250 60 5.0 -65 to +150
500
Version: A06
RATINGS AND CHARACTERISTIC CURVES (FRAF1001G THRU FRAF1007G)
FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE FIG.2- TYPICAL REVERSE CHARACTERISTICS
100
10
AVERAGE FORWARD CURRENT. (A)
8 40 6
Tj=125 0C
INSTANTANEOUS REVERSE CURRENT. ( A)
4
10
Tj=75 0C
2
4 2 1
0
0
50
100
o
150
CASE TEMPERATURE. ( C)
FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
150
0.4 0.2
Tj=25 0C
PEAK FORWARD SURGE CURRENT. (A)
125
TJ=125 0C
8.3ms Single Half Sine Wave JEDEC Method
0.1 0 20 40 60 80 100 120 140
100
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
75
50 400 25 200 0 NUMBER OF CYCLES AT 60Hz 100
FIG.5- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT. (A)
1
2
5
10
20
50
100
FIG.4- TYPICAL JUNCTION CAPACITANCE
300 Tj=25 C f=1.0MHz Vsig=50mVp-p
0
40 20 10
250
CAPACITANCE.(pF)
200
4 2 1
150
100
0.4 50 0.2 0.1 0.6
Tj=25oC Pulse Width=300 s 1% Duty Cycle
0.8 1.0 1.2 1.4 1.6 1.8 2.0
0 0.1
0.5
1
5
10
50
100
500 1000
REVERSE VOLTAGE. (V)
INSTANTANEOUS FORWARD VOLTAGE. (V)
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W NONINDUCTIVE 10W NONINDUCTIVE +0.5A (-) DUT (+) 50Vdc (approx) (-) PULSE GENERATOR (NOTE 2) 1W NON INDUCTIVE OSCILLOSCOPE (NOTE 1) (+) 0 -0.25A trr
NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms
-1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm
Version: A06

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